Gate-Controlled P–I–N Junction Switching Device with Graphene Nanoribbon
نویسندگان
چکیده
منابع مشابه
Polarization-induced switching effect in graphene nanoribbon edge-defect junction.
With nonequilibrium Green's function approach combined with density functional theory, we perform an ab initio calculation to investigate transport properties of graphene nanoribbon (GNR) junctions self-consistently. Tight-binding approximation is applied to model the zigzag (ZGNR) electrodes, and its validity is confirmed in comparison to the GAUSSIAN03 periodic boundary condition calculation ...
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ژورنال
عنوان ژورنال: Applied Physics Express
سال: 2011
ISSN: 1882-0778,1882-0786
DOI: 10.1143/apex.5.015101